Description
Page 1. 01/20/12. Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and. Avalanche SOA l Enhanced Page 1. 08/12/10. Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and. Avalanche SOA l Enhanced C digo. Corriente (A). Tensi n (V). Potencia (W). Res (ohms). VNP35N07F1. 35. 70. 40. 0.028. STP80NF70. 98. 68. 190. 0.008. IRFB3607 . 80. 75. 140. 0.009. Page 1. HEXFET Power MOSFET. 10/08/04. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 18. ID @ TC = 100 C. Page 1. Page 2. TABLE OF CONTENTS. SOLUTIONS BY APPLICATION. AC-DC. 3-6. DC-DC. 7-11. Solar Inverter. 12-13. Motor Control. 14-18. Lighting.
Part Number | IRFB3607 |
Brand | STMicroelectronics |
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IRFB3607
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