Description
IRF830 . SiHF830. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. Description. Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, IRF830 . N-Channel 500V-1.35 - 4.5A TO-220. PowerMESHTM MOSFET www.artschip.com. 1. TYPE. VDSS. RDS(on). ID. IRF830 . 500V. <1.5 . 4.5A. . VGS. Gate-Souse Voltage. 20. V. EAS. Single Pulse Avalanche Energy (note2). 280. mJ. IAR. Avalanche Current (note 1). 4.5. A. EAR. Repetitive Avalanche . N-Channel Enhancement Mode Field Effect Transistor. 1 . 2 . 3 . . 4
Part Number | IRF830 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 500V 4.5A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 74W (Tc) |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 2.7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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