Part Number | IRF8113TR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 17.2A 8-SOIC |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 17.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2910pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 17.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF8113TR
STMicroel
1999
1.31
Bonase Electronics (HK) Co., Limited
IRF8113TR
STMICROELECT
800
2.2525
Xinye International Technology Limited
IRF8113TR
ST/MICRON
63670
3.195
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IRF8113TR
ST
2687
4.1375
Nosin (HK) Electronics Co.
IRF8113TR
STMicroelectronics
4868000
5.08
Shenzhen WTX Capacitor Co., Ltd.