Part Number | IRF8010PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 100V 80A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3830pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 260W (Tc) |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 45A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
Hot Offer
IRF8010PBF
ST
200
2.195
TONGHECHUANGYUAN CO., LIMITED
IRF8010PBF
STMicroelectronics
8000
2.91
HK DANSONGDA ELECTRONIC TECHNOLOGY LIMITED
IRF8010PBF
STMicroel
180
0.05
SUNTOP SEMICONDUCTOR CO., LIMITED
IRF8010PBF IRF8010
STMICROELECT
11030
0.765
Ande Electronics Co., Limited
IRF8010PBF
ST/MICRON
3377
1.48
Belt (HK) Electronics Co