Description
www.irf.com. 1. 7/1/05. IRF7807Z . HEXFET Power MOSFET. Notes through are on page 10. Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate R14. 3 . 2. 7. 17. 9. 16. REFIN EN. FREQ V+. ILIM. C10. 0.22 F. Q2. Q1. Q4. Q3. (Q3 = Q4 = IRF7832). (Q1 = Q2 = IRF7807Z ). C5. 0.22 F. Design Procedure Jun 29, 2006 Absolute Maximum Ratings. Parameter. Units. VDS. Drain-to-Source Voltage. V. VGS. Gate-to-Source Voltage. ID @ TA = 25 C. Continuous May 1, 2008 IRF7807Z . However, IRF8714 or the ON Semiconductor. NTMS4872NR2G may work as well. It is the designers responsibility to assure that Inductor, SMT, 27 A, 1.5 H, 2.5 m , 0.508 x 0.520. Vishay. IHLP5050FDER1R5M01. Q1. 1. MOSFET, N-channel, 30 V, 11A, 13.8 m , SO-8. IR. IRF7807Z . Q2. 1.
Part Number | IRF7807Z |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 11A 8-SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 13.8 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF7807Z
STMicroel
6000
1.79
Shenzhen Qiangneng Electronics Co., Ltd.
IRF7807Z
STMICROELECT
35800
2.555
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF7807Z
ST/MICRON
10000
3.32
Shenzhen Taochip Electronic Co.,Ltd
IRF7807Z
ST
2532
4.085
Belt (HK) Electronics Co
IRF7807Z
STMicroelectronics
5
4.85
Shenzhen WTX Capacitor Co., Ltd.