Part Number | IRF7341PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 55V 4.7A 8-SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 4.7A |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 4.7A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
IRF7341PBF
STMicroel
7705
0.69
HK HEQING ELECTRONICS LIMITED
IRF7341PBF
STMICROELECT
8872
1.615
SUNTOP SEMICONDUCTOR CO., LIMITED
IRF7341PBF
ST/MICRON
2212
2.54
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF7341PBF
ST
3827
3.465
Xinnlinx Electronics Pte Ltd
IRF7341PBF
STMicroelectronics
8909
4.39
FLOWER GROUP(HK)CO.,LTD