STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

IRF644 , SiHF644 www.vishay.com. Vishay Siliconix. S16-0754-Rev. D, 02-May- 16. 1. Document Number: 91039. For technical questions, contact: hvm@vishay. IRF644 . SiHF644. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. Page 1. Document Number: 90253 www.vishay.com. Revision: 12-Mar-10. 1. R-C Thermal Model Parameters. IRF644_RC, SiHF644_RC. Vishay Siliconix. The IRF644 power MOSFETs used in this circuit are capable of handling up to 370W of redundant power across a 36V to 75V range. The IRF6662, 17.5mOhm Jul 25, 2015 High Endurance Non-volatile Memory segments. 64 Kbytes of In-System Self- programmable Flash program memory. 2 Kbytes EEPROM.

Part Number IRF644
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 250V 14A TO-220AB
Series -
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 280 mOhm @ 8.4A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.71   Highest Price: $2.59
1 - 5 of 5 Record(s)
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Part Number:

IRF644

Brand:

STMicroel

D/C:
Qty:

2694

Price (USD):

0.71

Company:

HK HEQING ELECTRONICS LIMITED

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Part Number:

IRF644(94-3014)

Brand:

STMICROELECT

D/C:
Qty:

12942

Price (USD):

1.18

Company:

CIS Ltd (CHECK IC SOLUTION LIMITED)

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Part Number:

IRF644

Brand:

ST/MICRON

D/C:
2022
Qty:

458600

Price (USD):

1.65

Company:

Shenzhen WTX Capacitor Co., Ltd.

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Part Number:

IRF644

Brand:

ST

D/C:
21+
Qty:

90649

Price (USD):

2.12

Company:

Cicotex Electronics (HK) Limited

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Part Number:

IRF644

Brand:

STMicroelectronics

D/C:
20+
Qty:

580

Price (USD):

2.59

Company:

WIN AND WIN ELECTRONICS LIMITED

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IRF644 Ref.

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