Description
IRF640S , SiHF640S, SiHF640L www.vishay.com. Vishay Siliconix. S16-0014- Rev. E, 18-Jan-16. 1. Document Number: 91037. For technical questions, contact : Jul 7, 2008 IRF640S , IRF640L, SiHF640S, SiHF640L. Vishay Siliconix. FEATURES. Surface Mount. Low-Profile Through-Hole. Available in Tape and IRF640 . SiHF640. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. Page 1. Page 2. Page 3. Page 4. |RF640. 3000. VGs = ov, f = 1MHz. Ciss = * Cog. Cds SHORTED. Crss = Cad. 2500. Coss Cos t Cad. . [T 2000. S. q} Siss. Page 1. Document Number: 90252 www.vishay.com. Revision: 12-Mar-10. 1. R-C Thermal Model Parameters. IRF640S_RC, IRF640L_RC, SiHF640S_RC
Part Number | IRF640S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 200V 18A D2PAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 130W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRF640S
STMicroel
6888
1.36
HK HEQING ELECTRONICS LIMITED
IRF640S
STMICROELECT
20000
2.16
Ande Electronics Co., Limited
IRF640S
ST/MICRON
3000
2.96
Belt (HK) Electronics Co
IRF640S
ST
1055
3.76
N&S Electronic Co., Limited
IRF640S
STMicroelectronics
5809
4.56
CIS Ltd (CHECK IC SOLUTION LIMITED)