Part Number | IRF640NLPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 200V 18A TO-262 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1160pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRF640NLPBF
STMicroel
2665
1.5
KYO Inc.
IRF640NLPBF
STMICROELECT
1000
2.6475
REALCHIP TECHNOLOGY (HK) CO., LIMITED
IRF640NLPBF
ST/MICRON
25
3.795
HK KK Int'l Co.,Limited
IRF640NLPBF
ST
83383
4.9425
Cicotex Electronics (HK) Limited
IRF640NLPBF
STMicroelectronics
11083
6.09
CIS Ltd (CHECK IC SOLUTION LIMITED)