STMicroelectronics

Ref. [hkinstmicroelectronics20220920][hkinbrandcloudAMpd]

Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

IRF630S , SiHF630S. Vishay Siliconix. FEATURES. Halogen-free According to IEC 61249-2-21. Definition. Surface Mount. Available in Tape and Reel. Package. TO-220AB. Lead (Pb)-free. IRF630PbF. SiHF630-E3. SnPb. IRF630 . SiHF630. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) . The HEXFET Power MOSFET used in all the examples is the IRF630 . The IRF630 was selected since it is a typical mid-range device with a voltage rating of Page 1. HEXFET Power MOSFET. 10/08/04. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 9.3. ID @ TC = 100 C. IRF230-233/ IRF630 -633. MTP12N18/12N20. N-Channel Power Mosfets. 12A, 150-200V www.artschip.com. 1. Description. These devices are n-channel,

Part Number IRF630S
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 200V 9A D2PAK
Series -
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 3W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 5.4A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.02   Highest Price: $2.44
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Part Number:

IRF630S

Brand:

STMicroelectronics

D/C:
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500000

Price (USD):

2.44

Company:

VBsemi Electronics Co., Limited

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Part Number:

IRF630S

Brand:

STMicroel

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2986

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0.02

Company:

Nosin (HK) Electronics Co.

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Part Number:

IRF630S

Brand:

STMICROELECT

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8500

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0.625

Company:

Yingxinyuan INT'L (Group) Limited

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Part Number:

IRF630S

Brand:

ST/MICRON

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23450

Price (USD):

1.23

Company:

Ande Electronics Co., Limited

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Part Number:

IRF630S.

Brand:

ST

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11756

Price (USD):

1.835

Company:

N&S Electronic Co., Limited

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IRF630S Ref.

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