STMicroelectronics

Ref. [hkinstmicroelectronics20220620][hkinbrandcloudAMpd]

Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Package. TO-220AB. Lead (Pb)-free. IRF630PbF. SiHF630-E3. SnPb. IRF630 . SiHF630. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) . IRF230-233/ IRF630 -633. MTP12N18/12N20. N-Channel Power Mosfets. 12A, 150-200V www.artschip.com. 1. Description. These devices are n-channel, The HEXFET Power MOSFET used in all the examples is the IRF630 . The control settings given in the examples are those suitable for the IRF630 . The user must IRF630 N-Channel Power MOSFET. GENERAL DESCRIPTION. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate An IRF630 operated at 10 Mhz with a gate voltage of 12 V would have gate drive losses of 3.6 W, independent from the value of the gate drive resistor. Clearly

Part Number IRF630B
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 200V 9A TO-220
Series -
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 72W (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 4.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.09   Highest Price: $3.72
1 - 5 of 5 Record(s)
Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

IRF630B FP001

Brand:

STMicroel

D/C:
Qty:

12000

Price (USD):

1.09

Company:

Ande Electronics Co., Limited

Buy
Part Number:

IRF630B

Brand:

STMICROELECT

D/C:
Qty:

11200

Price (USD):

1.7475

Company:

N&S Electronic Co., Limited

Buy
Part Number:

IRF630B

Brand:

ST/MICRON

D/C:
Qty:

38601

Price (USD):

2.405

Company:

N&S Electronic Co., Limited

Buy
Part Number:

IRF630B

Brand:

ST

D/C:
21+
Qty:

239287

Price (USD):

3.0625

Company:

Cicotex Electronics (HK) Limited

Buy
Part Number:

IRF630B

Brand:

STMicroelectronics

D/C:
19+
Qty:

300

Price (USD):

3.72

Company:

Yingxinyuan INT'L (Group) Limited

Buy

IRF630B Ref.

[hkinstmicroelectronics20220620][hkinbrandcloudAMpd]
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