STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

DATASHEET IRF630 . SiHF630. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. IRF630 . IRF630FP. N-channel 200V - 0.35 - 9A TO-220/TO-220FP. Mesh overlay II Power MOSFET. General features. Extremely high dv/dt capability. IRF230-233/ IRF630 -633. MTP12N18/12N20. N-Channel Power Mosfets. 12A, 150-200V www.artschip.com. 1. Description. These devices are n-channel, IRF630 N-Channel Power MOSFET. GENERAL DESCRIPTION. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate The HEXFET Power MOSFET used in all the examples is the IRF630 . The control settings given in the examples are those suitable for the IRF630 . The user must

Part Number IRF630
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 200V 9A TO-220
Series MESH OVERLAY,II
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 75W (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 4.5A, 10V
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.72   Highest Price: $4.32
1 - 5 of 5 Record(s)
Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

IRF630

Brand:

STMicroel

D/C:
20+
Qty:

9000

Price (USD):

1.72

Company:

Fairstock HK Limited

Buy
Part Number:

IRF630

Brand:

STMICROELECT

D/C:
Qty:

20000

Price (USD):

2.37

Company:

Xinye International Technology Limited

Buy
Part Number:

IRF630

Brand:

ST/MICRON

D/C:
Qty:

180

Price (USD):

3.02

Company:

SUNTOP SEMICONDUCTOR CO., LIMITED

Buy
Part Number:

IRF630

Brand:

ST

D/C:
Qty:

40000

Price (USD):

3.67

Company:

Belt (HK) Electronics Co

Buy
Part Number:

IRF630(ST)

Brand:

STMicroelectronics

D/C:
Qty:

12850

Price (USD):

4.32

Company:

CIS Ltd (CHECK IC SOLUTION LIMITED)

Buy

IRF630 Ref.

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