STMicroelectronics

Ref. [hkinstmicroelectronics20220620][hkinbrandcloudAMpd]

Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Datasheet Mar 21, 2011 IRF540PbF . SiHF540-E3. SnPb. IRF540. SiHF540. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. International. E Rectifier. PD-9.373H. |RF54O. HEXFET Power MOSFET. 0 Dynamic dv/dt Rating. 0 Repetitive Avalanche Rated. 0 175 C Operating IRF540N. HEXFET Power MOSFET. 03/13/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 1.15. R CS. Case-to-Sink, Flat, Greased Surface. IRF540PBF . 100. 77. 28. 20. 48. 21.3. 1. 150. IRF610PBF. 200. 1500. 3.3. 2.1. 5.5 . 3. 3.5. 36. IRF620PBF. 200. 800. 5.2. 3.3. 9.3. 5.3. 2.5. 50. IRF630PBF. 200.

Part Number IRF540PBF
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 100V 28A TO-220AB
Series -
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Rds On (Max) @ Id, Vgs 77 mOhm @ 17A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.21   Highest Price: $6.11
1 - 5 of 5 Record(s)
Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

IRF540PBF

Brand:

STMicroel

D/C:
Qty:

4284

Price (USD):

1.21

Company:

HK HEQING ELECTRONICS LIMITED

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Part Number:

IRF540PBF

Brand:

STMICROELECT

D/C:
Qty:

180

Price (USD):

2.435

Company:

SUNTOP SEMICONDUCTOR CO., LIMITED

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Part Number:

IRF540PBF

Brand:

ST/MICRON

D/C:
Qty:

5000

Price (USD):

3.66

Company:

Belt (HK) Electronics Co

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Part Number:

IRF540PBF

Brand:

ST

D/C:
21+
Qty:

1500

Price (USD):

4.885

Company:

Redstar Electronic Limited

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Part Number:

IRF540PBF

Brand:

STMicroelectronics

D/C:
21+
Qty:

90611

Price (USD):

6.11

Company:

Cicotex Electronics (HK) Limited

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IRF540PBF Ref.

[hkinstmicroelectronics20220620][hkinbrandcloudAMpd]
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