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Description
IRF540N . HEXFET Power MOSFET. 03/13/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 1.15. R CS. Case-to-Sink, Flat, Greased Surface. 0.50. . C/W. R JA. Junction-to-Ambient. . 62. Thermal Resistance www. irf.com. 1. VDSS = 100V. RDS(on) = 44m . ID = 33A. S. D. G. TO-220AB. Advanced Mar 18, 2004 operation outside rated limits. This is a calculated value limited to TJ < 175 C . Uses IRF540N data and test conditions. ssWhen mounted on 1! square PCB ( FRr4 or Gr10 Material). For recommended footprint and soldering techniques refer to application note #ANr994 parameter. Min. Typ. Max. Units. Jul 1, 2005 operation outside rated limits. This is a calculated value limited to TJ = 175 C . Uses IRF540N data and test conditions. **When mounted on 1 square PCB ( FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Parameter. Min. Typ. Max. Units. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to IRF540N . Q2. IRF540N . Q3. IRF540N . Q4. IRF540N . Q5. IRF540N . Q6. IRF540N . R1. 270R. R2. 270R. R3. 270R. R4. 270R. R5. 270R. R6. 270R. R7. 10k. R8. 10k . R9. 10k. R10. 10k. R11. 10k. R12. 10k. D12 www.arduino.cc blogembarcado. blogspot.com. AT. ME. GA. 328P. AT. M. EL. D11. D10. D9. D8. D7. D6. D5. D4. D3.
| Part Number | IRF540N |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | STMicroelectronics |
| Description | MOSFET N-CH 100V 33A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 79nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 33A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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