Part Number | IRF5305LPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 55V 31A TO-262 |
Series | HEXFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRF5305LPBF
STMicroel
221
0.54
Hanli Electronic Co., LTD
IRF5305LPBF
STMICROELECT
16000
1.6875
Finestock Electronics HK Limited
IRF5305LPBF
ST/MICRON
21
2.835
Cicotex Electronics (HK) Limited
IRF5305LPBF
ST
50
3.9825
Yingxinyuan INT'L (Group) Limited
IRF5305LPBF
STMicroelectronics
11001
5.13
CIS Ltd (CHECK IC SOLUTION LIMITED)