STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Page 1. V3. 2.5 volts. U1. LM317. V2. M2. IRF530 . V1. V4. 6.89 V. R4. 240. D1. 1N4148. R2. 25 k. R6. 220. R7. 240. 0.0V. 6.32V. 6.89. V7. 6.32 V. V4. Page 1. V3. 3.3 volts. U1. LM317. V2. M2. IRF530 . V1. R4. 394. D1. 1N4148. R2. 25 k. R6. 220. R7. 240. 0.0V. 6.32V. 6.69. V4. SW3. BAT1. 6.32 V. BAT2. 6.69 V. Date: 27-Apr-16. Sheet of. File: Sheet1.SchDoc. Drawn By: 10n. C2. CAP 1. 1u. C4. CAP 1. 100n. C5. CAP 1. GND. 1u. C8. CAP 1. 100n. C7. CAP 1. GND. GND.

Part Number IRF530
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 100V 14A TO-220AB
Series -
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 88W (Tc)
Rds On (Max) @ Id, Vgs 160 mOhm @ 8.4A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.35   Highest Price: $6.79
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Hot Offer

Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

IRF530

Brand:

STMicroelectronics

D/C:
15+
Qty:

200

Price (USD):

6.79

Company:

Top Electronics Co.,

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Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

IRF530

Brand:

STMicroel

D/C:
20+
Qty:

9000

Price (USD):

1.35

Company:

Fairstock HK Limited

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Part Number:

IRF530**

Brand:

STMICROELECT

D/C:
Qty:

49800

Price (USD):

2.71

Company:

Ande Electronics Co., Limited

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Part Number:

IRF530

Brand:

ST/MICRON

D/C:
Qty:

30000

Price (USD):

4.07

Company:

Belt (HK) Electronics Co

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Part Number:

IRF 530

Brand:

ST

D/C:
Qty:

6396

Price (USD):

5.43

Company:

E-CORE COMPONENT CO., LIMITED

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IRF530 Ref.

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