Description
Datasheet IRFP260N . HEXFET Power MOSFET. 10/08/04. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 50. ID @ TC = 100 C. Document Number: 91215 www.vishay.com. S11-0487-Rev. B, 21-Mar-11. 1. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED IRF3205. HEXFET Power MOSFET. 01/25/01. Absolute Maximum Ratings. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS. 2006/2007 www.infineon.com/distribution. Infineon Product C a talog for Distribution 2006/200. 7. Product Catalog for Distribution IRFZ44N. HEXFET Power MOSFET. 01/03/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 1.5. R CS. Case-to-Sink, Flat, Greased Surface. 0.50.
Part Number | IRF260NPBF |
Brand | STMicroelectronics |
Image |
IRF260NPBF
STMicroel
8977
0.35
AoHoo Enterprise (HongKong) Co., Limited
IRF260NPBF
STMICROELECT
5000
1.1375
Teng Shun Wei Electronics (HK) Limited.
IRF260NPBF
ST/MICRON
100
1.925
E-star Trading Enterprise Limited
IRF260NPBF
ST
37688
2.7125
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF260NPBF
STMicroelectronics
21
3.5
Cicotex Electronics (HK) Limited