Description
Jan 22, 2001 IRF250 . 200V 0.085 30A. For footnotes refer to the last page. REPETITIVE AVALANCHE AND dv/dt RATED. JANTX2N6766. HEXFET. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low 150. /543. JANTXV2N6766. IRF250 . N. 200. 20. 85. 30. 150. /543. JANTX2N6898. 2N6798. P. -100. 20. 200. -25. 150. /565. JANTXV2N6898. 2N6798. P. -100. 18 IRF250 . 2N6766. 2N6766. X. X. X. /543 TO-3 (060). N. 200V. 150W. Microsemi Corporation. 6 Lake Street, Lawrence, MA 01841 Ph: 978-620-2600. IRF250 . Q3. IRF250 . Q4. IRF250 . All Gates are connected to the Prop I/O pins. ( withPull-Down resistors if needed). PDF Created with deskPDF PDF Writer - Trial
Part Number | IRF250 |
Brand | STMicroelectronics |
Image |
Hot Offer
IRF250
ST
210
4.38
Shenzhen Yuhuantong International Trade Co., Ltd.
IRF250
STMicroelectronics
1000
5.58
Kang Da Electronics Co.
IRF250
STMicroel
1023
0.78
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF250
STMICROELECT
10
1.98
Yingxinyuan INT'L (Group) Limited
IRF250
ST/MICRON
210
3.18
FLOWER GROUP(HK)CO.,LTD