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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

2. 650V CoolMOS CFD2 Power Transistor. IPW65R041CFD . Rev. 2.0, 2011-10 -13. Final Data Sheet. TO-247 drain pin 2 gate pin 1 source pin 3. 1 Description. IPW65R150CFD. 110. IPI65R110CFD. IPB65R110CFD. IPP65R110CFD. IPA65R110CFD. IPW65R110CFD. 80. IPW65R080CFD. 41. IPW65R041CFD . Material Content Data Sheet. Sales Product Name. IPW65R041CFD . Issued. 29. August 2013. MA#. MA001001608. Package. PG-TO247-3-41. Weight*. IPA65R110CFD. SPW35N60CFD. IPW65R110CFD. 80. SPW47N60CFD. IPW65R080CFD. 41. IPW65R041CFD . CFD to CFD2 Cross Reference Table IPW65R041CFD . SP000756288. IPW65R041CFDFKSA1. TO-247. 650. 41. 3.5 4.5. 68.5. IPW65R080CFD. SP000745036. IPW65R080CFDFKSA1. TO-247.

Part Number IPW65R041CFD
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N CH 650V 68.5A PG-TO247
Series CoolMOS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Rds On (Max) @ Id, Vgs 41 mOhm @ 33.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.02   Highest Price: $2.33
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