Part Number | IPW60R160C6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 23.8A TO247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 23.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 750µA |
Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1660pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 176W (Tc) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 11.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
IPW60R160C6
STMicroel
21302
0.55
Useta Tech (HK) Limited
IPW60R160C6
STMICROELECT
2821
1.2075
HK HEQING ELECTRONICS LIMITED
IPW60R160C6
ST/MICRON
1000
1.865
Light International Technology CO., Limited
IPW60R160C6
ST
3366
2.5225
ANCHIP TECHNOLOGY CO., LIMITED
IPW60R160C6
STMicroelectronics
90
3.18
Yingxinyuan INT'L (Group) Limited