STMicroelectronics

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Description

Feb 20, 2014 Page 1. MOSFET. Metal Oxide Semiconductor Field Effect Transistor. OptiMOSTM. OptiMOSTM Power-Transistor, 60 V. IPT007N06N.

Part Number IPT007N06NATMA1
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 60V 300A 8HSOF
Series OptiMOS
Packaging
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.3V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 216nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 16000pF @ 30V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Rds On (Max) @ Id, Vgs 0.75 mOhm @ 150A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.53   Highest Price: $5.83
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IPT007N06NATMA1

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Shenzhen Xinxin Intelligent Electronics Co., Ltd

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IPT007N06NATMA1

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Shenzhen Zhongnuoxin Electronics Co., Ltd.

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180

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Company:

SUNTOP SEMICONDUCTOR CO., LIMITED

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IPT007N06NATMA1

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ACHIEVE ELECTRONICS CO., LIMITED

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Part Number:

IPT007N06NATMA1

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ST/MICRON

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N&S Electronic Co., Limited

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