Part Number | IPP06CNE8N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 85V 100A TO-220 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 85V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 180µA |
Gate Charge (Qg) (Max) @ Vgs | 138nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9240pF @ 40V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
IPP06CNE8N G
STMicroel
1000
1.81
MY Group (Asia) Limited
IPP06CNE8N
STMICROELECT
25000
2.485
3A COMPONENTS LIMITED
IPP06CNE8N G
ST/MICRON
5000
3.16
G Trader Limited
IPP06CNE8N
ST
30300
3.835
Shenzhen Ri-Stone Technology Co.,ltd
IPP06CNE8N
STMicroelectronics
3000
4.51
KANGFEI INDUSTRY (HK) LIMITED