Part Number | IPD35N10S3L26ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 100V 35A TO252-3 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 39µA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 71W (Tc) |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 35A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
Hot Offer
IPD35N10S3L26ATMA1
ST/MICRON
2000
4.315
Fly-Wing Technology (HK) Co., Limited
IPD35N10S3L26ATMA1
ST
20000
5.8475
Xiefeng (HK) INT'L Electronics Limited
IPD35N10S3L26ATMA1
STMicroelectronics
10000
7.38
Shenzhen TongKeXin Electronic Co.,LTD.
IPD35N10S3L26ATMA1
STMicroel
3250
1.25
ANCHIP TECHNOLOGY CO., LIMITED
IPD35N10S3L26ATMA1
STMICROELECT
404242
2.7825
Shenzhen WTX Capacitor Co., Ltd.