Part Number | IPB65R190CFD |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 17.5A TO263 |
Series | CoolMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 730µA |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 151W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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IPB65R190CFD
STMicroel
15221
0.72
HK HEQING ELECTRONICS LIMITED
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STMICROELECT
3540
2.065
ONSTAR ELECTRONICS CO., LIMITED
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ST/MICRON
19221
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Ande Electronics Co., Limited
IPB65R190CFD 65F6190
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11800
4.755
N&S Electronic Co., Limited
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19008
6.1
CIS Ltd (CHECK IC SOLUTION LIMITED)