Part Number | IPB65R110CFD |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 31.2A TO263 |
Series | CoolMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
Gate Charge (Qg) (Max) @ Vgs | 118nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3240pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 277.8W (Tc) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 12.7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
Hot Offer
IPB65R110CFD
ST
5000
2.1275
Circle World Electronics Ltd.
IPB65R110CFD
STMicroelectronics
6000
2.55
HONGKONG SINIKO ELECTRONIC LIMITED
IPB65R110CFD
STMicroel
4507
0.86
Hongkong Yunling Electronics Co.,Limited
IPB65R110CFD
STMICROELECT
10000
1.2825
Xiefeng (HK) INT'L Electronics Limited
IPB65R110CFD
ST/MICRON
6228
1.705
RX ELECTRONICS LIMITED