Description
IPB60R380C6, INF, TO-263-3, D?Pak (2 Leads + Tab), TO-263AB, MOSFET N-CH 600V 10.6A TO263, Discrete Semiconductor Products, FETs - Single
Part Number | IPB60R380C6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 10.6A TO263 |
Series | CoolMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 320µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 3.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB60R380C6
STMicroel
15000
0.47
Shenzhen Tecrutter Technology Co. , Ltd.
IPB60R380C6
STMICROELECT
610
1.6875
WIN AND WIN ELECTRONICS LIMITED
IPB60R380C6
ST/MICRON
15667
2.905
Senyes Electronic (HK) Limited
IPB60R380C6
ST
1000
4.1225
Yingxinyuan INT'L (Group) Limited
IPB60R380C6
STMicroelectronics
11050
5.34
CIS Ltd (CHECK IC SOLUTION LIMITED)