Part Number | IPB120N06N G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 60V 75A TO-263 |
Series | OptiMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 94µA |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2100pF @ 30V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 158W (Tc) |
Rds On (Max) @ Id, Vgs | 11.7 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB120N06N G
STMicroel
1000
1.42
Cicotex Electronics (HK) Limited
IPB120N06N
STMICROELECT
50
2.8925
FLOWER GROUP(HK)CO.,LTD
IPB120N06N G
ST/MICRON
16000
4.365
Finestock Electronics HK Limited
IPB120N06N G
ST
1500
5.8375
CIS Ltd (CHECK IC SOLUTION LIMITED)
IPB120N06N G
STMicroelectronics
55522
7.31
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED