Description
MOSFET. Metal Oxide Semiconductor Field Effect Transistor. CoolMOS CE. 500V CoolMOS CE Power Transistor. IPA50R380CE . Data Sheet. Rev. 2.2. IPA50R380CE IPD50R380CE IPP50R380CE. 280. IPA50R280CE. IPD50R280CE IPP50R280CE IPW50R280CE. 190. IPA50R190CE. IPP50R190CE. IPP50R500CE. 380 m . IPA50R380CE . IPD50R380CE. IPP50R380CE. 280 m . IPA50R280CE. IPD50R280CE. IPP50R280CE. IPW50R280CE. 190 m . IPP50R380CE. IPA50R380CE . 280. IPD50R280CE. IPP50R280CE. IPA50R280CE. IPW50R280CE. 190. IPP50R190CE. IPA50R190CE. IPW50R190CE. New! IPD50R800CE*. 650 m . IPA50R650CE*. IPD50R650CE*. 500 m . IPA50R500CE. IPD50R500CE. IPP50R500CE. 380 m . IPA50R380CE *. IPD50R380CE*.
Part Number | IPA50R380CE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 500V 9.9A TO220FP |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 9.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 260µA |
Gate Charge (Qg) (Max) @ Vgs | 24.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 584pF @ 100V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 29.2W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 3.2A, 13V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-FP |
Package / Case | TO-220-3 Full Pack |
Image |
IPA50R380CE
STMicroel
24590
1.86
HK HEQING ELECTRONICS LIMITED
IPA50R380CE
STMICROELECT
5000
3.065
Shenzhen Qiangneng Electronics Co., Ltd.
IPA50R380CE
ST/MICRON
13000
4.27
HONG KONG HORNG SHING LIMITED
IPA50R380CE(5R380CE)
ST
278
5.475
Yingxinyuan INT'L (Group) Limited
IPA50R380CE
STMicroelectronics
200000
6.68
Shenzhen WTX Capacitor Co., Ltd.