Description
Guard Ring Die Construction for Transient Protection. . Low Power Loss, High Efficiency. . High Surge Capability. . High Current Capability and Low Forward This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial Value. Unit. 1N5820 1N5821 1N5822. VRRM. Repetitive peak reverse voltage. 20. 30. 40. V. IF(RMS). RMS forward current. 10. A. IF(AV). Average forward Page 1. Document Number: 88526. For technical questions within your region, please contact one of the following: www.vishay.com. Revision: 20-Oct-09. Page 1. SENSITRON. SEMICONDUCTOR. Power Management, Technology & Innovation. Commercial Products. Selector Guide. Power Rectifiers.
Part Number | IN5822 |
Brand | STMicroelectronics |
Image |
IN5822
STMicroel
200
1.65
BRTD TECH CO.,LIMITED
IN5822
STMICROELECT
400
2.415
Shenzhen Taochip Electronic Co.,Ltd
IN5822
ST/MICRON
8000
3.18
HK HEQING ELECTRONICS LIMITED
IN5822
ST
6000
3.945
Antony Electronic Ltd.
in5822
STMicroelectronics
2826
4.71
Nosin (HK) Electronics Co.