Description
HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate Nov 16, 2007 May 16, 2008. November 16, 2008. HGTG11N120CND_NL. HGTG11N120CND . Fairchild Semiconductor. May 16, 2008. November 16, 2008.
Part Number | HGTG11N120CND |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | STMicroelectronics |
Description | IGBT 1200V 43A 298W TO247 |
Series | - |
Packaging | Tube |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 43A |
Current - Collector Pulsed (Icm) | 80A |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 11A |
Power - Max | 298W |
Switching Energy | 950µJ (on), 1.3mJ (off) |
Input Type | Standard |
Gate Charge | 100nC |
Td (on/off) @ 25°C | 23ns/180ns |
Test Condition | 960V, 11A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 70ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
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