Part Number | FQU1N60CTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 1A IPAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
Rds On (Max) @ Id, Vgs | 11.5 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
FQU1N60CTU
STMicroel
7517
1.69
HONG KONG HORNG SHING LIMITED
FQU1N60CTU
STMICROELECT
9746
2.7325
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQU1N60CTU
ST/MICRON
8562
3.775
SUMMER TECH(HK) LIMITED
FQU1N60CTU
ST
7362
4.8175
RX ELECTRONICS LIMITED
FQU1N60CTU
STMicroelectronics
9751
5.86
WIN AND WIN ELECTRONICS LIMITED