STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

FQPF9N50C : N-Channel QFET MOSFET 500V, 9A, 800m . For complete documentation, see the data sheet. These N-Channel enhancement mode power Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FQPF9N50C . FQPF9N50C . MOSFET, FQPF9N50C , and the UniFET II MOSFET,. FDPF8N50NZ, respectively. Under the same RDS(on), the capacitances of the UniFET II MOSFET were Jan 8, 2016 FQPF9N50C . TO220F-3. FSSZ. FSSZ. 2.11234. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in

Part Number FQPF9N50C
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 500V 9A TO-220F
Series QFET
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 44W (Tc)
Rds On (Max) @ Id, Vgs 800 mOhm @ 4.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.43   Highest Price: $1.32
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FQPF9N50C

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STMicroel

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100000

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Company:

JI Sheng (HK) Electronics Co., Limited

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FQPF9N50C

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STMICROELECT

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0.6525

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Belt (HK) Electronics Co

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FQPF9N50C

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ST/MICRON

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1000

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0.875

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RX ELECTRONICS LIMITED

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FQPF9N50C

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ST

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200000

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Shenzhen WTX Capacitor Co., Ltd.

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FQPF9N50C

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STMicroelectronics

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1000

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HONG KONG HORNG SHING LIMITED

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