STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

. . HFF12N60 . FQPF12N60C . N-Channel Enhancement Mode Field Effect Transistor Sep 14, 2016 FQPF12N60C . FQPF12N60C . TO220F-3. Sep 14, 2016. 1.0. FSSZ. 2.11234 g. Each. Manufacturing Process Information. Terminal Finish. FQPF12N60C : N-Channel QFET MOSFET 600V, 12A, 650m . For complete documentation, see the data sheet. These N-Channel enhancement mode power Jan 13, 2017 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQPF12N60C . TO220F-3. FSSZ. FSSZ. 2.11234. FQPF12N60C . N. Single. 600. 0.65. 48. 12. 51. TO-220F. FQP10N60C. N. Single. 600. 0.73. 44. 9.5. 156. TO-220. FQPF10N60C. N. Single. 600. 0.73. 44. 9.5.

Part Number FQPF12N60C
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 600V 12A TO-220F
Series QFET
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 51W (Tc)
Rds On (Max) @ Id, Vgs 650 mOhm @ 6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.34   Highest Price: $5.31
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Part Number:

FQPF12N60C

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STMicroel

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100000

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1.34

Company:

JI Sheng (HK) Electronics Co., Limited

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Part Number:

FQPF12N60C

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STMICROELECT

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10000

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2.3325

Company:

FLOWER GROUP(HK)CO.,LTD

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Part Number:

FQPF12N60C

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ST/MICRON

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12000

Price (USD):

3.325

Company:

SOUTHCHIP ELECTRONICS PTE. LTD.

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FQPF12N60C

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ST

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2920

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4.3175

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ALLCHIPS ELECTRONICS LIMITED

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FQPF12N60C

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STMicroelectronics

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N&S Electronic Co., Limited

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FQPF12N60C Ref.

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