STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Sep 14, 2016 FQPF10N60C . FQPF10N60C . TO220F-3. Sep 14, 2016. 1.0. FSSZ. 2.11234 g. Each. Manufacturing Process Information. Terminal Finish. Page 1. DIGITAL DISPLAY SOLUTIONS www.fairchildsemi.com. Display Interface and Control. Signal Process and Control. Display Interface and Control. Page 1. Semiconductor Components Industries, LLC, 2016. July, 2016 Rev. 2. 1. Publication Order Number: MBR10L60CT/D. MBR10L60CTG,. Page 1. Fujitsu Microelectronics Europe. User Guide. FMEMCU-UG-960009-14. F MC-16LX/FX FAMILY. EVALUATION BOARD. FLASH-CAN-64P-350- Apr 6, 2011 Page 1. To learn more about ON Semiconductor, please visit our website at www. onsemi.com. Is Now Part of. ON Semiconductor and the

Part Number FQPF10N60C
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 600V 9.5A TO-220F
Series QFET
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2040pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 50W (Tc)
Rds On (Max) @ Id, Vgs 730 mOhm @ 4.75A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.17   Highest Price: $5.83
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VBsemi Electronics Co., Limited

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STMicroelectronics

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FQPF10N60C

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STMicroel

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Viassion Technology Co., Limited

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FQPF10N60C 12N60C

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CIS Ltd (CHECK IC SOLUTION LIMITED)

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FQPF10N60C

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