Description
Datasheet Nov 1, 2013 *Drain current limited by maximum junction temperature. FQP10N20C / FQPF10N20C . N-Channel QFET. . MOSFET. 200 V, 9.5 A, 360 m . Mar 24, 2015 FQPF10N20C . FQPF10N20C . TO220F-3.csv. Mar 24, 2015. 1.0. FSSZ. 2.11234 g . Each. Manufacturing Process Information. Terminal Finish. Jul 14, 2015 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQPF10N20C . TO220F-3. FSSZ. FSSZ. 2.11234.
Part Number | FQPF10N20C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 200V 9.5A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 4.75A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF10N20C**
STMicroel
49800
0.16
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQPF10N20C
STMICROELECT
9000
0.975
SUMMER TECH(HK) LIMITED
FQPF10N20C
ST/MICRON
3314
1.79
Yataitong Electronic Technology Co., Limited
FQPF10N20C
ST
100
2.605
Yingxinyuan INT'L (Group) Limited
FQPF10N20C
STMicroelectronics
11001
3.42
Ande Electronics Co., Limited