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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Datasheet FQP9N50 . 500V N Channel MOSFET. General Description. These N Channel enhancement mode power field effect transistors are produced using Fairchild,s www.fairchildsemi.com. REV. 1.2.3 11/2/04. Features. Internally synchronized PFC and PWM in one 8-pin IC input current shaping technique. Peak or Application Note 9015. A180W, 100KHz Forward Converter Using QFET by I.S. Yang. 1. July, 2000. Rev. B, July 2000. Introduction. The inherent performance Application Note 6004. 500W Power-Factor-Corrected (PFC) Converter Design with FAN4810 www.fairchildsemi.com. REV. 1.0.1 10/31/03. This application RDS(ON) Max. ( ) @ VGS = 10V. QG Typ. (nC) @ VGS = 10V. ID (A). PD (W). Package. FDPF7N50. N. 500. Single. 0.9. 12.8. 7. 39. TO-220F. FQP9N50 . N. 500 .

Part Number FQP9N50
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 500V 9A TO-220
Series QFET
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 147W (Tc)
Rds On (Max) @ Id, Vgs 730 mOhm @ 4.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.24   Highest Price: $3.03
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STMicroel

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