STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

DATASHEET FQP85N06 Rev. C1 www.fairchildsemi.com. 1. FQP85N06 . N-Channel QFET. . MOSFET. 60 V, 85 A, 10 m . Description. This N-Channel enhancement mode Jun 11, 2007 MOSFET are attached. * TBR: To be included for prototype. R11 10k. 2. 1. Q2. FQP85N06 . Q2. FQP85N06 . RSHUNT1. 0.005. RSHUNT1. 0.005. Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP85N06 . TO220-3 (93.5-5-1.5DA_AlBW). FSSZ. Note: NTC Thermister RT1 to be placed. Close to the Heatsink to which. MOSFET are attached. R11 10k. 2. 1. Q2. FQP85N06 . Q2. FQP85N06 . RSHUNT1. 0.005.

Part Number FQP85N06
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 60V 85A TO-220
Series QFET
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4120pF @ 25V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 160W (Tc)
Rds On (Max) @ Id, Vgs 10 mOhm @ 42.5A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.28   Highest Price: $4.54
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