Description
Dec 1, 2013 FQP6N80C / FQPF6N80C. N-Channel QFET. . MOSFET. This N-Channel enhancement mode power MOSFET is produced using Fairchild Jan 8, 2016 FQP6N80C . TO220-3 (92.5-5-. 2.5DA_AlBW). Jan 08, 2016. 1.0. FSSZ. 2.030183 g. Each. Manufacturing Process Information. Terminal Finish. Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP6N80C . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ.
Part Number | FQP6N80C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 800V 5.5A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1310pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 158W (Tc) |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 2.75A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
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