Part Number | FQP6N80 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 800V 5.8A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 158W (Tc) |
Rds On (Max) @ Id, Vgs | 1.95 Ohm @ 2.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
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FQP6N80
STMicroel
7727
0.92
HK HEQING ELECTRONICS LIMITED
FQP6N80
STMICROELECT
1381
1.715
Hong Kong Capital Industrial Co.,Ltd
FQP6N80
ST/MICRON
7358
2.51
Nosin (HK) Electronics Co.
FQP6N80
ST
764
3.305
Yingxinyuan INT'L (Group) Limited
FQP6N80
STMicroelectronics
770
4.1
CIS Ltd (CHECK IC SOLUTION LIMITED)