STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

May 1, 2001 FQP30N06L . 60V LOGIC N-Channel MOSFET. General Description. These N- Channel enhancement mode power field effect transistors are The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the. MegaFET process. This process, which Product Overview. FQP30N06L : N-Channel QFET MOSFET 60V, 32A, 35m . For complete documentation, see the data sheet. This N-Channel enhancement Oct 24, 2011 INTRODUCTION TO IGBT. The Insulated Gate Bipolar transistor (IGBT) is a cross between a MOSFET (metal oxide semiconductor field effect. FQP30N06 : N-Channel QFET MOSFET 600V, 30A, 40m . For complete documentation, see the data sheet. This N-Channel enhancement mode power

Part Number FQP30N06L
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 60V 32A TO-220
Series QFET
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 79W (Tc)
Rds On (Max) @ Id, Vgs 35 mOhm @ 16A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.27   Highest Price: $3.08
1 - 5 of 5 Record(s)
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Part Number:

FQP30N06L

Brand:

STMicroel

D/C:
Qty:

12663

Price (USD):

0.27

Company:

HK HEQING ELECTRONICS LIMITED

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Part Number:

FQP30N06L**

Brand:

STMICROELECT

D/C:
Qty:

49800

Price (USD):

0.9725

Company:

N&S Electronic Co., Limited

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Part Number:

FQP30N06/L

Brand:

ST/MICRON

D/C:
Qty:

56000

Price (USD):

1.675

Company:

CIS Ltd (CHECK IC SOLUTION LIMITED)

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Part Number:

FQP30N06L

Brand:

ST

D/C:
21+
Qty:

500

Price (USD):

2.3775

Company:

Antony Electronic Ltd.

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Part Number:

FQP30N06L

Brand:

STMicroelectronics

D/C:
18+
Qty:

22429

Price (USD):

3.08

Company:

Yingxinyuan INT'L (Group) Limited

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FQP30N06L Ref.

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