Description
May 1, 2001 FQP30N06L . 60V LOGIC N-Channel MOSFET. General Description. These N- Channel enhancement mode power field effect transistors are The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the. MegaFET process. This process, which Product Overview. FQP30N06L : N-Channel QFET MOSFET 60V, 32A, 35m . For complete documentation, see the data sheet. This N-Channel enhancement Oct 24, 2011 INTRODUCTION TO IGBT. The Insulated Gate Bipolar transistor (IGBT) is a cross between a MOSFET (metal oxide semiconductor field effect. FQP30N06 : N-Channel QFET MOSFET 600V, 30A, 40m . For complete documentation, see the data sheet. This N-Channel enhancement mode power
Part Number | FQP30N06L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 60V 32A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 79W (Tc) |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
FQP30N06L
STMicroel
12663
0.27
HK HEQING ELECTRONICS LIMITED
FQP30N06L**
STMICROELECT
49800
0.9725
N&S Electronic Co., Limited
FQP30N06/L
ST/MICRON
56000
1.675
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQP30N06L
ST
500
2.3775
Antony Electronic Ltd.
FQP30N06L
STMicroelectronics
22429
3.08
Yingxinyuan INT'L (Group) Limited