Description
Product Overview. FQP30N06 : N-Channel QFET MOSFET 600V, 30A, 40m . For complete documentation, see the data sheet. This N-Channel enhancement Jan 13, 2017 FQP30N06 . TO220-3 (93.5-5-1.5DA_AlBW). FSSZ. FSSZ. 2.03301. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Sep 15, 2009 Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- May 1, 2001 These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.
Part Number | FQP30N06 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 60V 30A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 945pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 79W (Tc) |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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FQP30N06
STMicroel
15
1.07
FLOWER GROUP(HK)CO.,LTD
FQP30N06
STMICROELECT
100
1.8225
E-star Trading Enterprise Limited
FQP30N06
ST/MICRON
5000
2.575
Belt (HK) Electronics Co
FQP30N06
ST
9000
3.3275
SUMMER TECH(HK) LIMITED
FQP30N06
STMicroelectronics
25612
4.08
Yingxinyuan INT'L (Group) Limited