Description
Nov 1, 2013 Drain current limited by maximum junction temperature. Thermal Characteristics. Symbol. Parameter. FQP13N50C . FQPF13N50C. Units. VDSS. Jan 8, 2016 FQP13N50C . TO220-3 (92.5-5-. 2.5DA_AlBW). Jan 08, 2016. 1.0. FSSZ. 2.030183 g. Each. Manufacturing Process Information. Terminal Finish. Mar 4, 2010 Leadtrends Design. 220uH. LF1. Leadtrends Design. LF2. Leadtrends Design. Q1. FQP13N50C . 500V, 13A, TO-220. IC1. LD7591. SOP-8. V1. TL431. 1. Fairchild Semiconductor. Q1. FQP18N50V2. 1. Fairchild Semiconductor. Q2, Q3. FQP13N50C . 2. Fairchild Semiconductor. Q4, not used. MMBT3904. Jun 21, 2013 Voltage Rating. Part Number. 500 V. FQP13N50C , FQPF13N50C, FDP18N50, FDPF18N50, FDA18N50, FDP20N50(T), FDPF20N50(T). 600 V.
Part Number | FQP13N50C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 500V 13A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2055pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 195W (Tc) |
Rds On (Max) @ Id, Vgs | 480 mOhm @ 6.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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