Part Number | FQB4N80TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 800V 3.9A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 130W (Tc) |
Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.95A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB4N80TM
STMicroel
2012
0.5
HK HEQING ELECTRONICS LIMITED
FQB4N80TM
STMICROELECT
2000
1.705
Sun Kai Wah ( H.K. ) Electronics Co.
FQB4N80TM
ST/MICRON
8500
2.91
SUMMER TECH(HK) LIMITED
FQB4N80TM
ST
800
4.115
CFF Enterprises Limited
FQB4N80TM
STMicroelectronics
1628
5.32
N&S Electronic Co., Limited