Part Number | FQA6N90 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 900V 6.4A TO-3P |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 6.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1880pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 198W (Tc) |
Rds On (Max) @ Id, Vgs | 1.9 Ohm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Image |
FQA6N90
STMicroel
950
1.78
Cicotex Electronics (HK) Limited
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STMICROELECT
10000
2.3625
Ysx Tech Co., Limited
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ST/MICRON
16000
2.945
Finestock Electronics HK Limited
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ST
100
3.5275
RX ELECTRONICS LIMITED
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4.11
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED