Description
Datasheet FQA65N20 Rev. C2 www.fairchildsemi.com. 1. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary. Aug 9, 2014 Mfr Item Name. Effective Date. Version. Manufacturing Site. Weight*. UOM. Unit Type. FQA65N20 . FQA65N20 . TO-3P-3. INTERNAL SUZHOU. Aug 8, 2014 FQA65N20 . TO-3P-3. SUZHOU. INTERNAL. SUZHOU. 5.4346500. Not. Applicable. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles.
Part Number | FQA65N20 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 200V 65A TO-3P |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7900pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 310W (Tc) |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 32.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Image |
FQA65N20
STMicroel
5220
0.31
HONGKONG LINK E-TECHNOLOGY CO., LIMITED
FQA65N20
STMICROELECT
6300
1.415
SUMMER TECH(HK) LIMITED
FQA65N20
ST/MICRON
329
2.52
WIN AND WIN ELECTRONICS LIMITED
FQA65N20
ST
320
3.625
FLOWER GROUP(HK)CO.,LTD
FQA65N20
STMicroelectronics
106492
4.73
Cicotex Electronics (HK) Limited