STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Datasheet Nov 1, 2013 FDS8958B . Dual N & P-Channel PowerTrench. . MOSFET. Q1-N-Channel: 30 V , 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 m . Features. Jan 8, 2016 FDS8958B . SOIC-8 (CuBW-Gs). Jan 08, 2016. 1.0. GEM. 0.090751 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS8958B . SOIC-8 (CuBW-Gs). GEM. GEM. 0.090751. 8. HHIHH5 H. 6.001020. L. 1.75}? 3.90J_ro.10 5-60. /O ! /. Emma LAND PATTERN RECOMMENDATION. [SEE DETAIL A l J L:O. 4210. 09 EEK 10FH, 1.75A, 120mI DCR inductor. TOKO DE4518 Series. 1124BS-100M. Q1. 1. 30V dual n-/p-MOSFET (8 SO). Fairchild FDS8958B . R1, R3. 2. 10I, 1/16W Q1%

Part Number FDS8958B
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Arrays
Brand STMicroelectronics
Description MOSFET N/P-CH 30V 8SOIC
Series PowerTrench
Packaging Cut Tape (CT)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.4A, 4.5A
Rds On (Max) @ Id, Vgs 26 mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 15V
Power - Max 900mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Image Discrete Semiconductor Products - Transistors
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