Description
Jan 8, 2016 Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDS8672S . FDS8672S . SOIC-8. (NiPdAu_CuBW). (G). Jan 08, 2016. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS8672S . SOIC- 8 FDS8672S . Fairchild(9). 30V, 18A, N-Channel MOSFET, 7m RDS(ON) @ 4.5V. 1. R1,R5. CRCW06032R21FKEA. Vishay Dale(10). 2.21 Resistor, Size 0603, FDS8672S . Fairchild(9). 30V 18A N-Channel MOSFET 7m . Rds(on) @ 4.5V. 2. R1. CRCW06032R21FKEA. Vishay/Dale. 2.21 Resistor, Size 0603, 1%. 1. R2. Feb 12, 2015 Fairchild. 30V N-Channel MOSFET 6.9m RDS(ON) @ 4.5V. 2. Q2, Q3. FDS8672S . Fairchild. 30V N-Channel MOSFET 7m RDS(ON) @ 4.5V.
Part Number | FDS8672S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 18A 8-SOIC |
Series | PowerTrench, SyncFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2670pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
FDS8672S
STMicroel
30879
0.74
HK HEQING ELECTRONICS LIMITED
FDS8672S
STMICROELECT
227669
2.09
Cicotex Electronics (HK) Limited
FDS8672S
ST/MICRON
35200
3.44
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDS8672S MOS()
ST
2847
4.79
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDS8672S
STMicroelectronics
9000
6.14
SUMMER TECH(HK) LIMITED