STMicroelectronics

Ref. [hkinstmicroelectronics20220620][hkinbrandcloudAMpd]

Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Notes: 1. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting Oct 26, 2017 FDS6685 : P-Channel Logic Level PowerTrench MOSFET. For complete documentation, see the data sheet. This P-Channel MOSFET is a Dec 7, 2006 1. 33 H 5A inductor Coilcraft DS5022P-333. P2. 1. 35m -30V p-ch MOSFET ( SO-8) Fairchild FDS6685 . R9. 1. 22k 5% resistor (0603). R10. FDS6685 . FDS6375. IRFR5410. IRFR5410. CCOMP2 (pF). 220. 220. 22. 12 www.maximintegrated.com. Maxim Integrated 18. MAX1846/MAX1847. +175. 3.5. NDS9435A. 8-SO. 14. 80. 50. +175. 4. FDS4435. 8-SO. 24. 35. 50. + 175. 4. FDS6685 . 8-SO. 24. 35. 50. +175. 4.5. FDS6675A. 8-SO. 34. 19. 50. +175

Part Number FDS6685
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET P-CH 30V 8.8A 8SOIC
Series PowerTrench
Packaging Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1604pF @ 15V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Rds On (Max) @ Id, Vgs 20 mOhm @ 8.8A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.14   Highest Price: $2.88
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FDS6685

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STMicroelectronics

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850000

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2.88

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Far East Electronics Technology Limited

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FDS6685

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STMicroel

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HK HEQING ELECTRONICS LIMITED

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Cicotex Electronics (HK) Limited

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WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED

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ST

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FDS6685 Ref.

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