STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Datasheet Jul 1, 2010 The FDS6670AS is designed to replace a single SO-8. MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET 25. Package Marking and Ordering Information. Device Marking. Device. Reel Size. Tape width. Quantity. FDS6670A . FDS6670A . 13. 12mm. 2500 units. FDS6. Jul 14, 2015 Unit Type. FDS6670AS . FDS6670AS . SOIC-8 (CuBW-Gs). Jul 14, 2015. 1.0. SUBCON. 0.090751 g. Each. Manufacturing Process Information. FDS6670AS . SOIC-8 (CuBW-Gs). SUBCON. SUBCON. 0.090751. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp . FDS6670AS . Fairchild. IRF7821. International Rectifier. Inductor Selection. The inductor value and operating frequency determine the ripple current according to

Part Number FDS6670AS
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 30V 13.5A 8SOIC
Series PowerTrench, SyncFET
Packaging Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1540pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Rds On (Max) @ Id, Vgs 9 mOhm @ 13.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.72   Highest Price: $6.69
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Part Number:

FDS6670AS

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STMicroelectronics

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500

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6.69

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HK FEILIDI ELECTRONIC CO., LIMITED

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FDS6670AS

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STMicroel

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2500

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1.72

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FDS6670AS

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200

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WIN AND WIN ELECTRONICS LIMITED

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FDS6670AS

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ST

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104

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Shenzhen WTX Capacitor Co., Ltd.

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FDS6670AS Ref.

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