Description
Datasheet Jul 1, 2010 The FDS6670AS is designed to replace a single SO-8. MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET 25. Package Marking and Ordering Information. Device Marking. Device. Reel Size. Tape width. Quantity. FDS6670A . FDS6670A . 13. 12mm. 2500 units. FDS6. Jul 14, 2015 Unit Type. FDS6670AS . FDS6670AS . SOIC-8 (CuBW-Gs). Jul 14, 2015. 1.0. SUBCON. 0.090751 g. Each. Manufacturing Process Information. FDS6670AS . SOIC-8 (CuBW-Gs). SUBCON. SUBCON. 0.090751. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp . FDS6670AS . Fairchild. IRF7821. International Rectifier. Inductor Selection. The inductor value and operating frequency determine the ripple current according to
Part Number | FDS6670AS |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 13.5A 8SOIC |
Series | PowerTrench, SyncFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1540pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 13.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
Hot Offer
FDS6670AS
STMicroelectronics
500
6.69
HK FEILIDI ELECTRONIC CO., LIMITED
FDS6670AS
STMicroel
2500
1.72
HONG KONG HORNG SHING LIMITED
FDS6670AS
STMICROELECT
200
2.9625
RX ELECTRONICS LIMITED
FDS6670AS
ST/MICRON
3877
4.205
WIN AND WIN ELECTRONICS LIMITED
FDS6670AS
ST
104
5.4475
Shenzhen WTX Capacitor Co., Ltd.