STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

Rated (5/5) based on 12 customer reviews

Description

Datasheet FDS4935BZ . Dual 30 Volt P-Channel PowerTrench MOSFET. General Description. This P-Channel MOSFET has been designed specifically to improve the Jan 8, 2016 FDS4935BZ . SOIC-8 (CuBW-Gs). Jan 08, 2016. 1.0. GEM. 0.090751 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Nov 4, 2011 FDS4935BZ . Q5B. FDS4935BZ . 4. 6. 5. 3. R7. 49.9K. 0.5%. R7. 49.9K. 0.5%. C10 . 0.1uF. C10. 0.1uF. L1. 10uH. Toko. 892NAS-100M. L1. 10uH. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS4935BZ .

Part Number FDS4935BZ
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Arrays
Brand STMicroelectronics
Description MOSFET 2P-CH 30V 6.9A 8-SOIC
Series PowerTrench
Packaging Tape & Reel (TR)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.9A
Rds On (Max) @ Id, Vgs 22 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 15V
Power - Max 900mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.54   Highest Price: $4.73
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FDS4935BZ

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STMICROELECT

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20000

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Company:

Far East Electronics Technology Limited

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ST/MICRON

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30000

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2.635

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Cinty Int'l (HK) Industry Co., Limited

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FDS4935BZ

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ST

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2000

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HONGKONG HUIZHONGDINGTAI ELECTRONIC TECHNOLOGY LIMITED

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FDS4935BZ

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STMicroelectronics

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92500

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ShenZhen RunJiaXing Electronic Technology Co.,Ltd

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FDS4935BZ

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STMicroel

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CIS Ltd (CHECK IC SOLUTION LIMITED)

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